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KSD5041PTA

KSD5041PTA

KSD5041PTA

ON Semiconductor

KSD5041PTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD5041PTA Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSD5041
Power - Max 750mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 3A
Voltage - Collector Emitter Breakdown (Max) 20V
Current - Collector (Ic) (Max) 5A
Frequency - Transition 150MHz
KSD5041PTA Product Details

KSD5041PTA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.TO-92-3 is the supplier device package for this product.The device exhibits a collector-emitter breakdown at 20V.

KSD5041PTA Features


the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 1V @ 100mA, 3A
the supplier device package of TO-92-3

KSD5041PTA Applications


There are a lot of ON Semiconductor KSD5041PTA applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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