KSD5041PTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD5041PTA Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSD5041
Power - Max
750mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 3A
Voltage - Collector Emitter Breakdown (Max)
20V
Current - Collector (Ic) (Max)
5A
Frequency - Transition
150MHz
KSD5041PTA Product Details
KSD5041PTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.TO-92-3 is the supplier device package for this product.The device exhibits a collector-emitter breakdown at 20V.
KSD5041PTA Features
the DC current gain for this device is 180 @ 500mA 2V the vce saturation(Max) is 1V @ 100mA, 3A the supplier device package of TO-92-3
KSD5041PTA Applications
There are a lot of ON Semiconductor KSD5041PTA applications of single BJT transistors.