2N5551RL1 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 10mA 5V.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.When VCE saturation is 200mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 600mA for this device.The part has a transition frequency of 100MHz.During maximum operation, collector current can be as low as 600mA volts.

2N5551RL1 Features

the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz

2N5551RL1 Applications

There are a lot of ON Semiconductor 2N5551RL1 applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver