KSE13003H1ASTU Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 9 @ 500mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 3V @ 500mA, 1.5A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.4MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

KSE13003H1ASTU Features

the DC current gain for this device is 9 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 3V @ 500mA, 1.5A
the emitter base voltage is kept at 9V
the current rating of this device is 1.5A
a transition frequency of 4MHz

KSE13003H1ASTU Applications

There are a lot of ON Semiconductor KSE13003H1ASTU applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting