KSE45H8TU Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 60 @ 2A 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at -5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 40MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.

KSE45H8TU Features

the DC current gain for this device is 60 @ 2A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz

KSE45H8TU Applications

There are a lot of ON Semiconductor KSE45H8TU applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter