KSP44TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSP44TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 19 hours ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
300mA
Base Part Number
KSP44
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
300mA
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 10mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
750mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
400V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
750mV
Max Breakdown Voltage
400V
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
6V
hFE Min
50
Height
5.33mm
Length
5.2mm
Width
4.19mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.09167
$0.18334
6,000
$0.08657
$0.51942
10,000
$0.07893
$0.7893
50,000
$0.06790
$3.395
KSP44TA Product Details
KSP44TA Overview
In this device, the DC current gain is 50 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 750mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.The current rating of this fuse is 300mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 100MHz.As a result, it can handle voltages as low as 400V volts.Single BJT transistor is possible for the collector current to fall as low as 300mA volts at Single BJT transistors maximum.
KSP44TA Features
the DC current gain for this device is 50 @ 10mA 10V a collector emitter saturation voltage of 750mV the vce saturation(Max) is 750mV @ 5mA, 50mA the emitter base voltage is kept at 6V the current rating of this device is 300mA a transition frequency of 100MHz
KSP44TA Applications
There are a lot of ON Semiconductor KSP44TA applications of single BJT transistors.