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KSP44TA

KSP44TA

KSP44TA

ON Semiconductor

KSP44TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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KSP44TA Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 19 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 400V
Max Power Dissipation625mW
Terminal Position BOTTOM
Current Rating300mA
Base Part Number KSP44
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 750mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage400V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage750mV
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 6V
hFE Min 50
Height 5.33mm
Length 5.2mm
Width 4.19mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:22739 items

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KSP44TA Product Details

KSP44TA Overview


In this device, the DC current gain is 50 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 750mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.The current rating of this fuse is 300mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 100MHz.As a result, it can handle voltages as low as 400V volts.Single BJT transistor is possible for the collector current to fall as low as 300mA volts at Single BJT transistors maximum.

KSP44TA Features


the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
a transition frequency of 100MHz

KSP44TA Applications


There are a lot of ON Semiconductor KSP44TA applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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