KST3904LGEMTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.When VCE saturation is 300mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 6V for high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 200mA for this device.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
KST3904LGEMTF Features
the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
KST3904LGEMTF Applications
There are a lot of ON Semiconductor KST3904LGEMTF applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
