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BC546CTA

BC546CTA

BC546CTA

ON Semiconductor

BC546CTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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BC546CTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 65V
Max Power Dissipation 500mW
Terminal Position BOTTOM
Current Rating 100mA
Frequency 300MHz
Base Part Number BC546
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 250mV
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
hFE Min 110
Height 4.58mm
Length 4.58mm
Width 3.86mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.063974 $0.063974
500 $0.047040 $23.52
1000 $0.039200 $39.2
2000 $0.035963 $71.926
5000 $0.033611 $168.055
10000 $0.031266 $312.66
15000 $0.030238 $453.57
50000 $0.029732 $1486.6
BC546CTA Product Details

BC546CTA Overview


This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 65V volts.Collector current can be as low as 100mA volts at its maximum.

BC546CTA Features


the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz

BC546CTA Applications


There are a lot of ON Semiconductor BC546CTA applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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