BC546CTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BC546CTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
65V
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Current Rating
100mA
Frequency
300MHz
Base Part Number
BC546
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
420 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
6V
hFE Min
110
Height
4.58mm
Length
4.58mm
Width
3.86mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.063974
$0.063974
500
$0.047040
$23.52
1000
$0.039200
$39.2
2000
$0.035963
$71.926
5000
$0.033611
$168.055
10000
$0.031266
$312.66
15000
$0.030238
$453.57
50000
$0.029732
$1486.6
BC546CTA Product Details
BC546CTA Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 250mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 65V volts.Collector current can be as low as 100mA volts at its maximum.
BC546CTA Features
the DC current gain for this device is 420 @ 2mA 5V a collector emitter saturation voltage of 250mV the vce saturation(Max) is 600mV @ 5mA, 100mA the emitter base voltage is kept at 6V the current rating of this device is 100mA a transition frequency of 300MHz
BC546CTA Applications
There are a lot of ON Semiconductor BC546CTA applications of single BJT transistors.