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BST39TA

BST39TA

BST39TA

Diodes Incorporated

BST39TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

BST39TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 350V
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 70MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BST39
Pin Count 3
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 70MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA 10V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA
Collector Emitter Breakdown Voltage 350V
Transition Frequency 70MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 350V
Collector Base Voltage (VCBO) 400V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Continuous Collector Current 500mA
Height 1.5mm
Length 4.5mm
Width 2.5mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.156675 $0.156675
10 $0.147806 $1.47806
100 $0.139440 $13.944
500 $0.131547 $65.7735
1000 $0.124101 $124.101
BST39TA Product Details

BST39TA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 20mA 10V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 4mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 70MHz.There is a breakdown input voltage of 350V volts that it can take.Maximum collector currents can be below 500mA volts.

BST39TA Features


the DC current gain for this device is 40 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 70MHz

BST39TA Applications


There are a lot of Diodes Incorporated BST39TA applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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