BST39TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
BST39TA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Voltage - Rated DC
350V
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
Frequency
70MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BST39
Pin Count
3
JESD-30 Code
R-PSSO-F3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
70MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
350V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 20mA 10V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 4mA, 50mA
Collector Emitter Breakdown Voltage
350V
Transition Frequency
70MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
350V
Collector Base Voltage (VCBO)
400V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
Continuous Collector Current
500mA
Height
1.5mm
Length
4.5mm
Width
2.5mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.156675
$0.156675
10
$0.147806
$1.47806
100
$0.139440
$13.944
500
$0.131547
$65.7735
1000
$0.124101
$124.101
BST39TA Product Details
BST39TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 20mA 10V.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 4mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 70MHz.There is a breakdown input voltage of 350V volts that it can take.Maximum collector currents can be below 500mA volts.
BST39TA Features
the DC current gain for this device is 40 @ 20mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 4mA, 50mA the emitter base voltage is kept at 5V the current rating of this device is 500mA a transition frequency of 70MHz
BST39TA Applications
There are a lot of Diodes Incorporated BST39TA applications of single BJT transistors.