2SA1706S-AN datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2SA1706S-AN Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
SC-71
Supplier Device Package
3-NMP
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
2A
Frequency - Transition
150MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.11000
$0.11
500
$0.1089
$54.45
1000
$0.1078
$107.8
1500
$0.1067
$160.05
2000
$0.1056
$211.2
2500
$0.1045
$261.25
2SA1706S-AN Product Details
2SA1706S-AN Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is no device package available from the supplier for this product.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
2SA1706S-AN Features
the DC current gain for this device is 100 @ 100mA 2V the vce saturation(Max) is 700mV @ 50mA, 1A the supplier device package of 3-NMP
2SA1706S-AN Applications
There are a lot of Rochester Electronics, LLC 2SA1706S-AN applications of single BJT transistors.