MBT35200MT1G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1.5A 1.5V.With a collector emitter saturation voltage of -260mV, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 310mV @ 20mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 100MHz.As a result, it can handle voltages as low as 35V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

MBT35200MT1G Features

the DC current gain for this device is 100 @ 1.5A 1.5V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 310mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 100MHz

MBT35200MT1G Applications

There are a lot of ON Semiconductor MBT35200MT1G applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting