BDV65 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
BDV65 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-218-3
Surface Mount
NO
Transistor Element Material
SILICON
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.29.00.75
Subcategory
Other Transistors
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
DARLINGTON
Case Connection
COLLECTOR
Power - Max
125W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 4V
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
12A
Transition Frequency
60MHz
Frequency - Transition
60MHz
Power Dissipation-Max (Abs)
125W
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.76000
$2.76
500
$2.7324
$1366.2
1000
$2.7048
$2704.8
1500
$2.6772
$4015.8
2000
$2.6496
$5299.2
2500
$2.622
$6555
BDV65 Product Details
BDV65 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 5A 4V.60MHz is present in the transition frequency.Collector Emitter Breakdown occurs at 60VV - Maximum voltage.
BDV65 Features
the DC current gain for this device is 1000 @ 5A 4V a transition frequency of 60MHz
BDV65 Applications
There are a lot of Central Semiconductor Corp BDV65 applications of single BJT transistors.