JANTX2N2484 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JANTX2N2484 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
Series
Military, MIL-PRF-19500/376
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
360mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
360mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
225 @ 10mA 5V
Current - Collector Cutoff (Max)
2nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 100μA, 1mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
60MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$8.100000
$8.1
10
$7.641509
$76.41509
100
$7.208971
$720.8971
500
$6.800916
$3400.458
1000
$6.415959
$6415.959
JANTX2N2484 Product Details
JANTX2N2484 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 225 @ 10mA 5V DC current gain.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 6V can result in a high level of efficiency.In this part, there is a transition frequency of 60MHz.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
JANTX2N2484 Features
the DC current gain for this device is 225 @ 10mA 5V the vce saturation(Max) is 300mV @ 100μA, 1mA the emitter base voltage is kept at 6V a transition frequency of 60MHz
JANTX2N2484 Applications
There are a lot of Microsemi Corporation JANTX2N2484 applications of single BJT transistors.