2N3467 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3467 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Surface Mount
NO
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Subcategory
Other Transistors
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Configuration
Single
Power - Max
1W
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
1A
Transition Frequency
175MHz
Frequency - Transition
175MHz
Power Dissipation-Max (Abs)
5W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.43000
$3.43
500
$3.3957
$1697.85
1000
$3.3614
$3361.4
1500
$3.3271
$4990.65
2000
$3.2928
$6585.6
2500
$3.2585
$8146.25
2N3467 PBFREE Product Details
2N3467 PBFREE Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 500mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 100mA, 1A.In this part, there is a transition frequency of 175MHz.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.
2N3467 PBFREE Features
the DC current gain for this device is 40 @ 500mA 1V the vce saturation(Max) is 1V @ 100mA, 1A a transition frequency of 175MHz
2N3467 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3467 PBFREE applications of single BJT transistors.