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TIP100G

TIP100G

TIP100G

ON Semiconductor

TIP100G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

TIP100G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 14 hours ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation2W
Peak Reflow Temperature (Cel) 260
Current Rating8A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number TIP10*
Pin Count3
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation40W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2.5V @ 80mA, 8A
Collector Emitter Breakdown Voltage60V
Collector Emitter Saturation Voltage2V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Continuous Collector Current 4A
Height 6.35mm
Length 6.35mm
Width 25.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9221 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.88000$0.88
50$0.72980$36.49
100$0.59560$59.56
500$0.47082$235.41

TIP100G Product Details

TIP100G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.A VCE saturation (Max) of 2.5V @ 80mA, 8A means Ic has reached its maximum value(saturated).Maintaining the continuous collector voltage at 4A is essential for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 8A.A maximum collector current of 8A volts can be achieved.

TIP100G Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A

TIP100G Applications


There are a lot of ON Semiconductor TIP100G applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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