FMBA56 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 100mA.The base voltage of the emitter can be kept at -4V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Parts of this part have transition frequencies of 50MHz.There is a breakdown input voltage of 80V volts that it can take.During maximum operation, collector current can be as low as 500mA volts.

FMBA56 Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 50MHz

FMBA56 Applications

There are a lot of ON Semiconductor FMBA56 applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting