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MMBT2132T3

  • MMBT2132T3
  • MMBT2132T3

MMBT2132T3

MMBT2132T3

Rochester Electronics, LLC

MMBT2132T3 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

MMBT2132T3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish TIN LEAD
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
[email protected] Reflow Temperature-Max (s) 30
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 342mW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 100mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 70mA, 700mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 700mA
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.07000 $0.07
500 $0.0693 $34.65
1000 $0.0686 $68.6
1500 $0.0679 $101.85
2000 $0.0672 $134.4
2500 $0.0665 $166.25
MMBT2132T3 Product Details

MMBT2132T3 Overview


DC current gain in this device equals 150 @ 100mA 3V, which is the ratio of the base current to the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 70mA, 700mA.Collector Emitter Breakdown occurs at 30VV - Maximum voltage.

MMBT2132T3 Features


the DC current gain for this device is 150 @ 100mA 3V
the vce saturation(Max) is 400mV @ 70mA, 700mA

MMBT2132T3 Applications


There are a lot of Rochester Electronics, LLC MMBT2132T3 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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