SMMBTA14LT1G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.The emitter base voltage can be kept at 10V for high efficiency.A transition frequency of 125MHz is present in the part.A maximum collector current of 300mA volts is possible.

SMMBTA14LT1G Features

the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 125MHz

SMMBTA14LT1G Applications

There are a lot of ON Semiconductor SMMBTA14LT1G applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver