MJB44H11G Overview
In this device, the DC current gain is 40 @ 4A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Its current rating is 10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 50MHz.During maximum operation, collector current can be as low as 10A volts.
MJB44H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz
MJB44H11G Applications
There are a lot of ON Semiconductor MJB44H11G applications of single BJT transistors.
- Inverter
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- Muting
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- Interface
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- Driver
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