MJD112-1G Overview

In this device, the DC current gain is 1000 @ 2A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 40mA, 4A.A 2A continuous collector voltage is necessary to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 25MHz.Collector current can be as low as 2A volts at its maximum.

MJD112-1G Features

the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz

MJD112-1G Applications

There are a lot of ON Semiconductor MJD112-1G applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface