MJD148T4G Overview
DC current gain in this device equals 85 @ 500mA 1V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 4A.3MHz is present in the transition frequency.A breakdown input voltage of 45V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
MJD148T4G Features
the DC current gain for this device is 85 @ 500mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 3MHz
MJD148T4G Applications
There are a lot of ON Semiconductor MJD148T4G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
