2SC4213-A(TE85L,F) Overview

DC current gain in this device equals 200 @ 4mA 2V, which is the ratio of the base current to the collector current.As it features a collector emitter saturation voltage of 100mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 100mV @ 3mA, 30A.Keeping the emitter base voltage at 25V allows for a high level of efficiency.Maximum collector currents can be below 300mA volts.

2SC4213-A(TE85L,F) Features

the DC current gain for this device is 200 @ 4mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 100mV @ 3mA, 30A
the emitter base voltage is kept at 25V

2SC4213-A(TE85L,F) Applications

There are a lot of Toshiba Semiconductor and Storage 2SC4213-A(TE85L,F) applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface