MJD31CT4G Overview
DC current gain in this device equals 10 @ 3A 4V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.2V @ 375mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Single BJT transistor can be broken down at a voltage of 100V volts.Maximum collector currents can be below 3A volts.
MJD31CT4G Features
the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
MJD31CT4G Applications
There are a lot of ON Semiconductor MJD31CT4G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
