NST848BF3T5G Overview
This device has a DC current gain of 200 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.There is a transition frequency of 100MHz in the part.Collector current can be as low as 100mA volts at its maximum.
NST848BF3T5G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
NST848BF3T5G Applications
There are a lot of ON Semiconductor NST848BF3T5G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
