MPS751G Overview

This device has a DC current gain of 75 @ 1A 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.An emitter's base voltage can be kept at 5V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -2A.75MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

MPS751G Features

the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 75MHz

MPS751G Applications

There are a lot of ON Semiconductor MPS751G applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting