CPH6102-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
CPH6102-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 weeks ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Subcategory
Other Transistors
Max Power Dissipation
1.3W
Reach Compliance Code
not_compliant
Configuration
Single
Power - Max
1.3W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
50V
Frequency - Transition
150MHz
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.397120
$3.39712
10
$3.204830
$32.0483
100
$3.023425
$302.3425
500
$2.852287
$1426.1435
1000
$2.690837
$2690.837
CPH6102-TL-E Product Details
CPH6102-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
CPH6102-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA
CPH6102-TL-E Applications
There are a lot of ON Semiconductor CPH6102-TL-E applications of single BJT transistors.