2N3390 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N3390 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
2N3390
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
400 @ 2mA 4.5V
Current - Collector Cutoff (Max)
100nA ICBO
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
500mA
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.19000
$0.19
500
$0.1881
$94.05
1000
$0.1862
$186.2
1500
$0.1843
$276.45
2000
$0.1824
$364.8
2500
$0.1805
$451.25
2N3390 Product Details
2N3390 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 400 @ 2mA 4.5V.Product comes in TO-92-3 supplier package.There is a 25V maximal voltage in the device due to collector-emitter breakdown.
2N3390 Features
the DC current gain for this device is 400 @ 2mA 4.5V the supplier device package of TO-92-3
2N3390 Applications
There are a lot of ON Semiconductor 2N3390 applications of single BJT transistors.