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2N3390

2N3390

2N3390

ON Semiconductor

2N3390 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2N3390 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature-55°C~150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2N3390
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 2mA 4.5V
Current - Collector Cutoff (Max) 100nA ICBO
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 500mA
In-Stock:34504 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.19000$0.19
500$0.1881$94.05
1000$0.1862$186.2
1500$0.1843$276.45
2000$0.1824$364.8
2500$0.1805$451.25

2N3390 Product Details

2N3390 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 400 @ 2mA 4.5V.Product comes in TO-92-3 supplier package.There is a 25V maximal voltage in the device due to collector-emitter breakdown.

2N3390 Features


the DC current gain for this device is 400 @ 2mA 4.5V
the supplier device package of TO-92-3

2N3390 Applications


There are a lot of ON Semiconductor 2N3390 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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