MPS2222RLRMG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.6V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.6V @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In this part, there is a transition frequency of 250MHz.The maximum collector current is 600mA volts.
MPS2222RLRMG Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 600mA
a transition frequency of 250MHz
MPS2222RLRMG Applications
There are a lot of ON Semiconductor MPS2222RLRMG applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
