MJE3439G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 20mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 4mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 300mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 15MHz.A maximum collector current of 300mA volts can be achieved.

MJE3439G Features

the DC current gain for this device is 15 @ 20mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 4mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 15MHz

MJE3439G Applications

There are a lot of ON Semiconductor MJE3439G applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter