MMBT5551M3T5G Overview

This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Input voltage breakdown is available at 160V volts.Maximum collector currents can be below 60mA volts.

MMBT5551M3T5G Features

the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V

MMBT5551M3T5G Applications

There are a lot of ON Semiconductor MMBT5551M3T5G applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter