FSB660A Overview
In this device, the DC current gain is 250 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 300mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -2A.In this part, there is a transition frequency of 75MHz.Single BJT transistor can be broken down at a voltage of 60V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor FSB660A applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
