KSC2001YBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSC2001YBU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
600mW
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
135 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 70mA, 700mA
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
700mA
Transition Frequency
170MHz
Frequency - Transition
170MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.02000
$0.02
500
$0.0198
$9.9
1000
$0.0196
$19.6
1500
$0.0194
$29.1
2000
$0.0192
$38.4
2500
$0.019
$47.5
KSC2001YBU Product Details
KSC2001YBU Overview
DC current gain in this device equals 135 @ 100mA 1V, which is the ratio of the base current to the collector current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A transition frequency of 170MHz is present in the part.The device exhibits a collector-emitter breakdown at 25V.
KSC2001YBU Features
the DC current gain for this device is 135 @ 100mA 1V the vce saturation(Max) is 600mV @ 70mA, 700mA a transition frequency of 170MHz
KSC2001YBU Applications
There are a lot of Rochester Electronics, LLC KSC2001YBU applications of single BJT transistors.