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MJF3055G

MJF3055G

MJF3055G

ON Semiconductor

MJF3055G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJF3055G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature UL RECOGNIZED
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 30W
Peak Reflow Temperature (Cel) 260
Current Rating 10A
Frequency 2MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection ISOLATED
Transistor Application SWITCHING
Gain Bandwidth Product 2MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 90V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 3.3A, 10A
Collector Emitter Breakdown Voltage 90V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 90V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Height 6.35mm
Length 6.35mm
Width 25.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.191404 $2.191404
10 $2.067362 $20.67362
100 $1.950342 $195.0342
500 $1.839945 $919.9725
1000 $1.735797 $1735.797
MJF3055G Product Details

MJF3055G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 4A 4V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 3.3A, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.2MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.

MJF3055G Features


the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 2.5V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz

MJF3055G Applications


There are a lot of ON Semiconductor MJF3055G applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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