MJF3055G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MJF3055G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
UL RECOGNIZED
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
30W
Peak Reflow Temperature (Cel)
260
Current Rating
10A
Frequency
2MHz
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
2MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
90V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 3.3A, 10A
Collector Emitter Breakdown Voltage
90V
Transition Frequency
2MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
90V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
Height
6.35mm
Length
6.35mm
Width
25.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.191404
$2.191404
10
$2.067362
$20.67362
100
$1.950342
$195.0342
500
$1.839945
$919.9725
1000
$1.735797
$1735.797
MJF3055G Product Details
MJF3055G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 4A 4V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 3.3A, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.2MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
MJF3055G Features
the DC current gain for this device is 20 @ 4A 4V a collector emitter saturation voltage of 1V the vce saturation(Max) is 2.5V @ 3.3A, 10A the emitter base voltage is kept at 5V the current rating of this device is 10A a transition frequency of 2MHz
MJF3055G Applications
There are a lot of ON Semiconductor MJF3055G applications of single BJT transistors.