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MMBT3416LT3G

MMBT3416LT3G

MMBT3416LT3G

ON Semiconductor

MMBT3416LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT3416LT3G Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Frequency 75MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MMBT3416
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 75MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 2mA 4.5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 3mA, 50mA
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 300mV
Collector Base Voltage (VCBO) 4V
Emitter Base Voltage (VEBO) 4V
hFE Min 75
Height 1.11mm
Length 3.04mm
Width 2.64mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.022343 $0.022343
500 $0.016428 $8.214
1000 $0.013690 $13.69
2000 $0.012560 $25.12
5000 $0.011738 $58.69
10000 $0.010919 $109.19
15000 $0.010560 $158.4
50000 $0.010384 $519.2
MMBT3416LT3G Product Details

MMBT3416LT3G Overview


This device has a DC current gain of 75 @ 2mA 4.5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 3mA, 50mA.Emitter base voltages of 4V can achieve high levels of efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.

MMBT3416LT3G Features


the DC current gain for this device is 75 @ 2mA 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 3mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA

MMBT3416LT3G Applications


There are a lot of ON Semiconductor MMBT3416LT3G applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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