MMBT3416LT3G Overview
This device has a DC current gain of 75 @ 2mA 4.5V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 3mA, 50mA.Emitter base voltages of 4V can achieve high levels of efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
MMBT3416LT3G Features
the DC current gain for this device is 75 @ 2mA 4.5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 3mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
MMBT3416LT3G Applications
There are a lot of ON Semiconductor MMBT3416LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
