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FZT689BTA

FZT689BTA

FZT689BTA

Diodes Incorporated

FZT689BTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FZT689BTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 20V
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 3A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FZT689
JESD-30 Code R-PDSO-G4
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 20mA, 3A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 3A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.948840 $0.94884
10 $0.895132 $8.95132
100 $0.844464 $84.4464
500 $0.796664 $398.332
1000 $0.751570 $751.57
FZT689BTA Product Details

FZT689BTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 400 @ 2A 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 450mV @ 20mA, 3A.A constant collector voltage of 3A is necessary for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.In this part, there is a transition frequency of 150MHz.Breakdown input voltage is 20V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

FZT689BTA Features


the DC current gain for this device is 400 @ 2A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 450mV @ 20mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 150MHz

FZT689BTA Applications


There are a lot of Diodes Incorporated FZT689BTA applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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