FZT689BTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
FZT689BTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Voltage - Rated DC
20V
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
3A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
FZT689
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
400 @ 2A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
450mV @ 20mA, 3A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
20V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
3A
Height
1.65mm
Length
6.7mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.948840
$0.94884
10
$0.895132
$8.95132
100
$0.844464
$84.4464
500
$0.796664
$398.332
1000
$0.751570
$751.57
FZT689BTA Product Details
FZT689BTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 400 @ 2A 2V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 450mV @ 20mA, 3A.A constant collector voltage of 3A is necessary for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.In this part, there is a transition frequency of 150MHz.Breakdown input voltage is 20V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
FZT689BTA Features
the DC current gain for this device is 400 @ 2A 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 450mV @ 20mA, 3A the emitter base voltage is kept at 5V the current rating of this device is 3A a transition frequency of 150MHz
FZT689BTA Applications
There are a lot of Diodes Incorporated FZT689BTA applications of single BJT transistors.