SPZT2907AT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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SPZT2907AT1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 12 hours ago)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Subcategory
Other Transistors
Max Power Dissipation
1.5W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
200MHz
Base Part Number
PZT2907A
Pin Count
4
Number of Elements
1
Configuration
SINGLE
Power Dissipation
1.5W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
200MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.959682
$0.959682
10
$0.905360
$9.0536
100
$0.854113
$85.4113
500
$0.805767
$402.8835
1000
$0.760158
$760.158
SPZT2907AT1G Product Details
SPZT2907AT1G Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
SPZT2907AT1G Features
the DC current gain for this device is 100 @ 150mA 10V the vce saturation(Max) is 1.6V @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 200MHz
SPZT2907AT1G Applications
There are a lot of ON Semiconductor SPZT2907AT1G applications of single BJT transistors.