MMBT5550LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT5550LT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Package / Case
SOT-23-3
Number of Pins
3
Packaging
Cut Tape (CT)
Published
2001
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
140V
Max Power Dissipation
225mW
Current Rating
600mA
Polarity
NPN
Element Configuration
Single
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
600mA
Collector Emitter Breakdown Voltage
140V
Collector Emitter Saturation Voltage
150mV
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
hFE Min
60
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.02000
$0.02
500
$0.0198
$9.9
1000
$0.0196
$19.6
1500
$0.0194
$29.1
2000
$0.0192
$38.4
2500
$0.019
$47.5
MMBT5550LT1 Product Details
MMBT5550LT1 Overview
A collector emitter saturation voltage of 150mV allows maximum design flexibility.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 600mA.When collector current reaches its maximum, it can reach 600mA volts.
MMBT5550LT1 Features
a collector emitter saturation voltage of 150mV the emitter base voltage is kept at 6V the current rating of this device is 600mA
MMBT5550LT1 Applications
There are a lot of ON Semiconductor MMBT5550LT1 applications of single BJT transistors.