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MMBT5550LT1

MMBT5550LT1

MMBT5550LT1

ON Semiconductor

MMBT5550LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT5550LT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Package / Case SOT-23-3
Number of Pins 3
Packaging Cut Tape (CT)
Published 2001
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 140V
Max Power Dissipation 225mW
Current Rating 600mA
Polarity NPN
Element Configuration Single
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 600mA
Collector Emitter Breakdown Voltage 140V
Collector Emitter Saturation Voltage 150mV
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 60
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.02000 $0.02
500 $0.0198 $9.9
1000 $0.0196 $19.6
1500 $0.0194 $29.1
2000 $0.0192 $38.4
2500 $0.019 $47.5
MMBT5550LT1 Product Details

MMBT5550LT1 Overview


A collector emitter saturation voltage of 150mV allows maximum design flexibility.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 600mA.When collector current reaches its maximum, it can reach 600mA volts.

MMBT5550LT1 Features


a collector emitter saturation voltage of 150mV
the emitter base voltage is kept at 6V
the current rating of this device is 600mA

MMBT5550LT1 Applications


There are a lot of ON Semiconductor MMBT5550LT1 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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