MMBT6520LT3G Overview
This device has a DC current gain of 20 @ 50mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -1V ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.As a result, the part has a transition frequency of 40MHz.The maximum collector current is 500mA volts.
MMBT6520LT3G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 40MHz
MMBT6520LT3G Applications
There are a lot of ON Semiconductor MMBT6520LT3G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
