MMBTA55LT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of -250mV.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 4V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.50MHz is present in the transition frequency.The breakdown input voltage is 60V volts.Collector current can be as low as 500mA volts at its maximum.
MMBTA55LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MMBTA55LT1G Applications
There are a lot of ON Semiconductor MMBTA55LT1G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
