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MMBTA92LT3G

MMBTA92LT3G

MMBTA92LT3G

ON Semiconductor

MMBTA92LT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBTA92LT3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -300V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -500mA
Frequency 50MHz
Base Part Number MMBTA92
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 30mA 10V
Current - Collector Cutoff (Max) 250nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -500mV
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.02957 $0.2957
30,000 $0.02673 $0.8019
50,000 $0.02390 $1.195
100,000 $0.02248 $2.248
250,000 $0.02012 $5.03
MMBTA92LT3G Product Details

MMBTA92LT3G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 30mA 10V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.As you can see, the part has a transition frequency of 50MHz.During maximum operation, collector current can be as low as 50mA volts.

MMBTA92LT3G Features


the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz

MMBTA92LT3G Applications


There are a lot of ON Semiconductor MMBTA92LT3G applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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