DRDN005W-7 Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 250mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 80V volts.During maximum operation, collector current can be as low as 500mA volts.
DRDN005W-7 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 100MHz
DRDN005W-7 Applications
There are a lot of Diodes Incorporated DRDN005W-7 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
