MPS750 Overview

DC current gain in this device equals 75 @ 1A 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).There is a transition frequency of 75MHz in the part.Collector current can be as low as 2A volts at its maximum.

MPS750 Features

the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 75MHz

MPS750 Applications

There are a lot of ON Semiconductor MPS750 applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface