Welcome to Hotenda.com Online Store!

logo
userjoin
Home

KSD1417TU

KSD1417TU

KSD1417TU

Rochester Electronics, LLC

KSD1417TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

KSD1417TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 3A 3V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 2V @ 14mA, 7A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 7A
RoHS StatusROHS3 Compliant
In-Stock:1266 items

KSD1417TU Product Details

KSD1417TU Overview


This device has a DC current gain of 2000 @ 3A 3V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 14mA, 7A.Supplier device package TO-220F comes with the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.

KSD1417TU Features


the DC current gain for this device is 2000 @ 3A 3V
the vce saturation(Max) is 2V @ 14mA, 7A
the supplier device package of TO-220F

KSD1417TU Applications


There are a lot of Rochester Electronics, LLC KSD1417TU applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

Get Subscriber

Enter Your Email Address, Get the Latest News