KSD1417TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSD1417TU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
2W
Transistor Type
NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 3A 3V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 14mA, 7A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
7A
RoHS Status
ROHS3 Compliant
KSD1417TU Product Details
KSD1417TU Overview
This device has a DC current gain of 2000 @ 3A 3V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 14mA, 7A.Supplier device package TO-220F comes with the product.The device has a 60V maximal voltage - Collector Emitter Breakdown.
KSD1417TU Features
the DC current gain for this device is 2000 @ 3A 3V the vce saturation(Max) is 2V @ 14mA, 7A the supplier device package of TO-220F
KSD1417TU Applications
There are a lot of Rochester Electronics, LLC KSD1417TU applications of single BJT transistors.