MPSA05RLRAG Overview

In this device, the DC current gain is 100 @ 100mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 250mV allows maximum design flexibility.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 4V for high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).In the part, the transition frequency is 100MHz.There is a breakdown input voltage of 60V volts that it can take.A maximum collector current of 500mA volts is possible.

MPSA05RLRAG Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz

MPSA05RLRAG Applications

There are a lot of ON Semiconductor MPSA05RLRAG applications of single BJT transistors.

• Inverter
• Muting
• Driver
• Interface