2SA1587-BL,LF Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 350 @ 2mA 6V.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 1mA, 10mA means Ic has reached its maximum value(saturated).A -100mA continuous collector voltage is necessary to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.An input voltage of 120V volts is the breakdown voltage.The maximum collector current is 100mA volts.

2SA1587-BL,LF Features

the DC current gain for this device is 350 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V

2SA1587-BL,LF Applications

There are a lot of Toshiba Semiconductor and Storage 2SA1587-BL,LF applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter