NSS30101LT1G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 500mA 5V.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.The part has a transition frequency of 100MHz.Breakdown input voltage is 30V volts.Collector current can be as low as 1A volts at its maximum.

NSS30101LT1G Features

the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz

NSS30101LT1G Applications

There are a lot of ON Semiconductor NSS30101LT1G applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter