BCX51TF

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Manufacturer part number:BCX51TF

Manufacturer:Nexperia USA Inc.

Description:BCX51TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

Case Package:SOT-23

Datasheet:BCX51TF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mounting Type	Surface Mount
Package / Case	TO-243AA
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Pin Count	3
Power - Max	500mW
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150mA 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	1A
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$0.08000	$0.08
500	$0.0792	$39.6
1000	$0.0784	$78.4
1500	$0.0776	$116.4
2000	$0.0768	$153.6
2500	$0.076	$190

BCX51TF Overview

In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Detection of Collector Emitter Breakdown at 45V maximal voltage is present.