MPSW06G Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 60 @ 250mA 1V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 4V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.When collector current reaches its maximum, it can reach 500mA volts.

MPSW06G Features

the DC current gain for this device is 60 @ 250mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 10mA, 250mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 50MHz

MPSW06G Applications

There are a lot of ON Semiconductor MPSW06G applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface