KSE2955T datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
KSE2955T Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
600mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
700μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
10A
Transition Frequency
2MHz
Frequency - Transition
2MHz
RoHS Status
ROHS3 Compliant
KSE2955T Product Details
KSE2955T Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 4A 4V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 8V @ 3.3A, 10A.Single BJT transistor contains a transSingle BJT transistorion frequency of 2MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
KSE2955T Features
the DC current gain for this device is 20 @ 4A 4V the vce saturation(Max) is 8V @ 3.3A, 10A a transition frequency of 2MHz
KSE2955T Applications
There are a lot of Rochester Electronics, LLC KSE2955T applications of single BJT transistors.