MPS6601G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 500mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).As you can see, the part has a transition frequency of 100MHz.The device has a 25V maximal voltage - Collector Emitter Breakdown.
MPS6601G Features
the DC current gain for this device is 50 @ 500mA 1V
the vce saturation(Max) is 600mV @ 100mA, 1A
a transition frequency of 100MHz
MPS6601G Applications
There are a lot of Rochester Electronics, LLC MPS6601G applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
