MPS6601G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
MPS6601G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
1A
Transition Frequency
100MHz
Frequency - Transition
100MHz
Turn Off Time-Max (toff)
300ns
Turn On Time-Max (ton)
55ns
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.06000
$0.06
500
$0.0594
$29.7
1000
$0.0588
$58.8
1500
$0.0582
$87.3
2000
$0.0576
$115.2
2500
$0.057
$142.5
MPS6601G Product Details
MPS6601G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 500mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).As you can see, the part has a transition frequency of 100MHz.The device has a 25V maximal voltage - Collector Emitter Breakdown.
MPS6601G Features
the DC current gain for this device is 50 @ 500mA 1V the vce saturation(Max) is 600mV @ 100mA, 1A a transition frequency of 100MHz
MPS6601G Applications
There are a lot of Rochester Electronics, LLC MPS6601G applications of single BJT transistors.