MSB710-RT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MSB710-RT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
200mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 150mA 10V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
500mA
Transition Frequency
200MHz
Power Dissipation-Max (Abs)
0.2W
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.260320
$11.26032
10
$10.622943
$106.22943
100
$10.021645
$1002.1645
500
$9.454382
$4727.191
1000
$8.919228
$8919.228
MSB710-RT1 Product Details
MSB710-RT1 Overview
In this device, the DC current gain is 120 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 30mA, 300mA.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 200MHz.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
MSB710-RT1 Features
the DC current gain for this device is 120 @ 150mA 10V the vce saturation(Max) is 600mV @ 30mA, 300mA the current rating of this device is -500mA a transition frequency of 200MHz
MSB710-RT1 Applications
There are a lot of ON Semiconductor MSB710-RT1 applications of single BJT transistors.