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MSB710-RT1

MSB710-RT1

MSB710-RT1

ON Semiconductor

MSB710-RT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MSB710-RT1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -50V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -500mA
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 150mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 200MHz
Power Dissipation-Max (Abs) 0.2W
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.260320 $11.26032
10 $10.622943 $106.22943
100 $10.021645 $1002.1645
500 $9.454382 $4727.191
1000 $8.919228 $8919.228
MSB710-RT1 Product Details

MSB710-RT1 Overview


In this device, the DC current gain is 120 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 30mA, 300mA.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 200MHz.There is a 50V maximal voltage in the device due to collector-emitter breakdown.

MSB710-RT1 Features


the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the current rating of this device is -500mA
a transition frequency of 200MHz

MSB710-RT1 Applications


There are a lot of ON Semiconductor MSB710-RT1 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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